Technical Features
- Function: Wafer-level substrate, high-fidelity replication, high-precision alignment, low-residue imprinting
- Applications: Semiconductor wafers, microlens arrays, photonic chips, microfluidic chips, optical waveguides
Performance Parameters
- Substrate Size: ≤ 12 inches; compatible with 8-inch / 12-inch glass / silicon wafers, as well as 4-inch / 6-inch silicon wafers
- Imprint Mode: Roll-to-flat, plate-to-plate (optional); Coating Method: Spin coating; Dispensing (optional)
- Imprint Characteristics: Coating thickness uniformity better than ±5%; Residual layer < 20 nm for structures ranging from 50 nm to 2 μm
- Resist Thickness: 20 μm – 200 μm (precisely controllable thickness in plate-to-plate mode)
- Alignment Accuracy: ±5 μm @ 6 inches (double-sided alignment, 6-axis precision adjustment stage)
- Light Source: 1000 mW/cm? @ 365 nm (LED area light source)
- Imprint Stage: Micro-porous wafer vacuum chuck, temperature control with active cooling (up to 100 °C ±3%)
- Cleanliness Class: Internal environment Class 10 (external environment requirement: Class 100)
- Ambient Temperature: 15–25 ℃, Humidity: ≤ 70%
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